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IRFIZ24E
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
60
–––
–––
0.052
––– V V GS = 0V, I D = 250μA
––– V/°C Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.071
?
V GS = 10V, I D = 7.8A ?
––– R G = 24 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 10A ?
25 V DS = 60V, V GS = 0V
μA
250 V DS = 48V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
20 I D = 10A
5.3 nC V DS = 44V
7.6 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 28V
––– I D = 10A
ns
––– R D = 2.6 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
––– V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
370
140
65
12
––– V GS = 0V
pF
––– ? = 1.0MHz, See Fig. 5 ?
––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
14
68
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S = 7.8A, V GS = 0V ?
––– 56 83 ns T J = 25°C, I F = 10A
––– 120 180 μC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 1.0mH
R G = 25 ? , I AS = 10A. (See Figure 12)
? I SD ≤ 10A, di/dt ≤ 280A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRFZ24N data and test conditions
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